A collaborative team from the Filler Lab at Georgia Tech and the Shan Lab at Rutgers University just published a paper titled “Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles” in the journal Small. The works demonstrates a route to determine the electrical conductivities of nanowires containing two differently doped regions in a high-throughput, non-contact manner. It sets the stage for characterizing complete electronic devices, which similarly consist of multiple types of domains.
