General Interest

 

  1. “Fundamental Manufacturing Process Innovation Changes the World,” M. A. Filler, M. J. Realff, SSRN (2019, 2020) [Also available on Medium]

 

Peer-reviewed Publications

 

  1. “Programming Semiconductor Nanowire Composition with Sub–100-nm Resolution via the Geode Process,” M. Mujica, A. T. Mohabir, P. P. Shetty, M. T. McDowell, W. R. Cline, D. Aziz, V. Breedveld, S. H. Behrens, M. A. Filler, Nano Lett. 22 554 (2022). [10.1021/acs.nanolett.1c02545]

  2. “Impact of Porosity and Boundary Scattering on Thermal Transport in Diameter Modulated Nanowires,” A. Malhotra, G. Tutuncuoglu, S. Kommandur, P. Creamer, A. Rajan, A. T. Mohabir, S. Yee, M. A. Filler, M. Maldovan, ACS Appl. Mater. Interfaces 14 1740 (2022). [10.1021/acsami.1c20242]

  3. “Bottom-up Nanoscale Patterning and Selective Deposition on Silicon Nanowires,” A. T. Mohabir, D. Aziz, A. C. Brummer, K. E. Taylor, E. M. Vogel, M. A. Filler, Nanotechnology 33 105604 (2021). [10.1088/1361-6528/ac3bed]

  4. “Bottom-Up Fabrication and Characterization of a Self-Aligned Gate Stack for Electronics Applications,” A. C. Brummer, A. T. Mohabir, D. Aziz, M. A. Filler, E. M. Vogel, Appl. Phys. Lett. 119 142901 (2021). [10.1063/5.0062163]

  5. “Reducing Conductivity Variability in Si Nanowires via Surface Passivation for Nanoelectronics,” W. Yuan, G. Tutuncuoglu, A. T. Mohabir, R. Thorpe, L. C. Feldman, M. A. Filler, J. W. Shan, ACS Appl. Nano Mater. 4 3852 (2021). [10.1021/acsanm.1c00258]

  6. “One-dimensional Twisted and Tubular Structures of Zinc Oxide by Semiconductor-catalyzed Vapor–Liquid–Solid Synthesis,” T. Pham, S. Kommandur, H. Lee, D. Zakharov, M. A. Filler, F. M. Ross, Nanotechnology 32 075603 (2020). [10.1088/1361-6528/abc452]

  7. “The Geode Process: Hollow Silica Microcapsules as a High Surface Area Substrate for Semiconductor Nanowire Growth,” M. Mujica, G. Tutuncuoglu, A. T. Mohabir, V. Breedveld, S. H. Behrens, M. A. Filler, ACS Appl. Nano Mater. 3 905 (2020). [10.1021/acsanm.9b02553]

  8. “Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures via Surface Initiated Polymerization and Selective Etching,” A. T. Mohabir, G. Tutuncuoglu, T. Weiss, E. M. Vogel, M. A. Filler, ACS Nano 14 282 (2020). [10.1021/acsnano.9b04363]

  9. Surface Plasmon Driven Near- and Mid-Infrared Photoconductivity in Ligand-free ITO Nanocrystal Films,” D. S. Boyuk, W. Hu, H-Y. Hui, M. A. Filler, J. Vac. Sci. Tech. A 38 022420 (2020). [10.1116/1.5139310]

  10. “Self-regenerating Giant Hyaluronan Polymer Brushes,” W. Wei, J. L. Faubel, H. Selvakumar, D. T. Kovari, J. Tsao, F. Rivas, A. T. Mohabir, M. Krecker, E. Rahbar, A. R. Hall, M. A. Filler, J. L. Washburn, P. H. Weigel, J. E. Curtis, Nat. Comm. 10 5527 (2019). [10.1038/s41467-019-13440-7]

  11. "Quantification of Carrier Density Gradients along Axially-doped Silicon Nanowires using Infrared Nanoscopy," L. Jung, J. Pries, T. Maß, M. Lewin, D. S. Boyuk, A. T. Mohabir, M. A. Filler, M. Wuttig, T. Taubner, ACS Photon. 6 1744 (2019). [10.1021/acsphotonics.9b00466]

  12. “Photonic Thermal Conduction by Infrared Plasmonic Resonators in Semiconductor Nanowires,” E. J. Tervo, M. E. Gustafson, Z. M. Zhang, B. A. Cola, M. A. Filler, Appl. Phys. Lett. 114 163104 (2019). [10.1063/1.5093309]

  13. “Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles,” W. Yuan, G. Tutuncuoglu, A. T. Mohabir, L. Liu, L. C. Feldman, M. A. Filler, W. Shan, Small 15 1805140 (2019). [10.1002/smll.201805140]

  14. "Enhanced Photodesorption from Near- and Mid-Infrared Plasmonic Nanocrystal Thin Films," W. Hu, M. A. Filler, J. Vac. Sci. Tech. A 36 061401 (2018). [10.1116/1.5046381]

  15. "Sub-diffractional Waveguiding by Mid-Infrared Plasmonic Resonators in Semiconductor Nanowires," E. J. Tervo, D. S. Boyuk, B. A. Cola, Z. M. Zhang, M. A. Filler, Nanoscale 10 5708 (2018). [10.1039/C8NR00701B]

  16. "Atomic-Scale Choreography of Vapor-Liquid-Solid Growth," M. Ek, M. A. Filler, Acc. Chem. Res. 51 118 (2018). [10.1021/acs.accounts.7b00392]

  17. "Reversible Tuning of the Surface Plasmon Resonance of Indium Tin Oxide Nanocrystals by Gas-Phase Oxidation and Reduction," W. Hu, S. Guo, J. Gaul, M. G. Boebinger, M. T. McDowell, M. A. Filler, J. Phys. Chem. C 121 15970 (2017). [10.1021/acs.jpcc.7b02733]

  18. "Process Principles for Large-Scale Nanomanufacturing," S. V. Behrens, V. Breedveld, M. Mujica, M. A. Filler, Annu. Rev. Chem. Biomol. Eng. 8 201 (2017). [10.1146/annurev-chembioeng-060816-101522]

  19. "Low-Temperature Growth of Axial Si/Ge Nanowire Heterostructures Enabled by Trisilane," H.-Y. Hui, M. de la Mata, J. A. Arbiol, M. A. Filler, Chem. Mater. 29 3397 (2017). [10.1021/acs.chemmater.6b03952]

  20. "Surface Hydrogen Enables Sub-Eutectic Vapor-Liquid-Solid Semiconductor Nanowire Growth," S. V. Sivaram, H.-Y. Hui, M. de la Mata, J. A. Arbiol, M. A. Filler, Nano Lett. 16 6717 (2016). [10.1021/acs.nanolett.6b01640]

  21. "High-throughput Electrical Measurement and Microfluidic Sorting of Semiconductor Nanowires," C. Akin, L. C. Feldman, C. Durand, S. M. Hus, A.-P. Li, H.-Y. Hui, M. A. Filler, J. Yi, J. W. Shan, Lab Chip 16 2126 (2016). [10.1039/C6LC00217J]

  22. "Strong Near-Field Coupling of Plasmonic Resonators Embedded in Si Nanowires," D. S. Boyuk, L.-W. Chou, M. A. Filler, ACS Photon. 3 184 (2016). [10.1021/acsphotonics.5b00581]

  23. "Solid-Liquid-Vapor Etching of Semiconductor Nanowires," H.-Y. Hui, M. A. Filler, Nano Lett. 15 6939 (2015). [10.1021/acs.nanolett.5b02880]

  24. "Direct Observation of Transient Surface Species during Ge Nanowire Growth and their Influence on Growth Stability," S. V. Sivaram, N. Shin, L.-W. Chou, M. A. Filler, J. Am. Chem. Soc. 137 9861 (2015). [10.1021/jacs.5b03818]

  25. "A Contactless Determination of Electrical Conductivity of One-dimensional Nanomaterials by Solution-based Electro-orientation Spectroscopy," C. Akin, J. Yi, L. C. Feldman, C. Durand, S. M. Hus, A.-P. Li, M. A. Filler, J. W. Shan, ACS Nano 9 5405 (2015). [10.1021/acsnano.5b01170]

  26. "Optically Abrupt Localized Surface Plasmon Resonances in Si Nanowires by Mitigation of Carrier Density Gradients," L.-W. Chou, D. S. Boyuk, M. A. Filler, ACS Nano 9 1250 (2015). [10.1021/nn504974z]

  27. "Interplay Between Defect Propagation and Surface Hydrogen in Si Nanowire Kinking Superstructures," N. Shin, M. Chi, M. A. Filler, ACS Nano 8 3829 (2014). [10.1021/nn500598d]

  28. "Influence of Dielectric Anisotropy on the Absorption Properties of Localized Surface Plasmon Resonances Embedded in Si Nanowires," L.-W. Chou, R. D. Near, D. S. Boyuk, M. A. Filler, J. Phys. Chem. C 118 5494 (2014). [10.1021/jp501452q]

  29. "Diameter Modulation as a Route to Probe the Vapour-Liquid-Solid Growth Kinetics of Semiconductor Nanowires," I. R. Musin, N. Shin, M. A. Filler, J. Mater. Chem. C 2 3285 (2014). [10.1039/C3TC32038C] [2014 Emerging Investigator themed issue]

  30. "Sidewall Morphology-Dependent Formation of Multiple Twins in Si Nanowires," N. Shin, M. Chi, M. A. Filler, ACS Nano 7 8206 (2013). [10.1021/nn4036798]

  31. "Engineering Multimodal Localized Surface Plasmon Resonances in Si Nanowires," L.-W. Chou and M. A. Filler, Angew. Chem. Int. Ed. 52 8079 (2013). [10.1002/anie.201301468] [Inside back cover – Issue 31, July 29, 2013]

  32. "Rational Defect Introduction in Silicon Nanowires," N. Shin, M. Chi, J. Y. Howe, M. A. Filler, Nano Lett. 13 1928 (2013). [10.1021/nl3042728]

  33. "Surface Chemistry Controlled Diameter-Modulated Semiconductor Nanowire Superstructures," I. R. Musin, D. S. Boyuk, M. A. Filler, J. Vac. Sci. Technol. B 31 020603 (2013). [10.1116/1.4792660] [Cover article – Mar/Apr 2013]

  34. "Tunable Mid-Infrared Localized Surface Plasmon Resonances in Si Nanowires," L.-W. Chou, N. Shin, S. V. Sivaram, M. A. Filler, J. Am. Chem. Soc. 134 16155 (2012). [10.1021/ja3075902] [JACS Spotlight – October 23, 2012]

  35. "Chemical Control of Semiconductor Nanowire Kinking and Superstructure," I. R. Musin, M. A. Filler, Nano Lett. 12 3363 (2012). [10.1021/nl204065p]

  36. "Controlling Silicon Nanowire Growth Direction Via Surface Chemistry," N. Shin, M. A. Filler, Nano Lett. 12 2865 (2012). [10.1021/nl300461a]

  37. "A Combined Photovoltaic and Li ion Battery Device for Continuous Energy Harvesting and Storage,” V. Chakrapani, F. Rusli, M. A. Filler, P. A. Kohl, J. Power Sources 216 84 (2012). [10.1016/j.jpowsour.2012.05.048]

  38. “Silicon Nanowire Anode: Improved Battery Life with Capacity-Limited Cycling,” V. Chakrapani, F. Rusli, M. A. Filler, P. A. Kohl, J. Power Sources 205 433 (2012). [10.1016/j.jpowsour.2012.01.061]

  39. “Quaternary Ammonium Ionic Liquid Electrolyte for Silicon Nanowire Based Lithium Ion Battery,” V. Chakrapani, F. Rusli, M. A. Filler, P. A. Kohl, J. Phys. Chem. C 115 22048 (2011). [10.1021/jp207605w]

  40. “Secondary Ion Mass Spectrometry of Vapor-Liquid-Solid Grown, Au-Catalyzed Silicon Wires,” M. C. Putnam, M. A. Filler, B. M. Kayes, M. D. Kelzenberg, Y. Guan, N. S. Lewis, J. M. Eiler, H. A. Atwater, Nano Lett. 8 3109 (2008). [10.1021/nl801234y]

  41. “Flexible Polymer-Embedded Silicon Wire Arrays,” K. E. Plass*, M. A. Filler*, J. M. Spurgeon, B. M. Kayes, S. Maldonado, B. S. Brunschwig, H. A. Atwater, N. S. Lewis, Adv. Mater. 21 325 (2008). [10.1002/adma.200802006]

  42. “Photovoltaic Measurements in Single-Nanowire Silicon Solar Cells,” M. D. Kelzenberg, D. B. Turner-Evans, B. M. Kayes, M. A. Filler, M. C. Putnam, N. S. Lewis, H. A. Atwater, Nano Lett. 8 710 (2008). [10.1021/nl072622p]

  43. “High Aspect Ratio Silicon Wire Array Photoelectrochemical Cells,” J. R. Maiolo, B. M. Kayes, M. A. Filler, M. C. Putnam, M. D. Kelzenberg, H. A. Atwater, N. S. Lewis, J. Am. Chem. Soc. 129 12346 (2007). [10.1021/ja074897c] [Science Editor’s Choice – Oct. 12, 2007]

  44. “Growth of Vertically Aligned Silicon Wire Arrays over Large Areas (> 1 cm2) with Au and Cu Catalysts,” B. M. Kayes*, M. A. Filler*, M. C. Putnam, M. D. Kelzenberg, N. S. Lewis, H. A. Atwater, Appl. Phys. Lett. 91 103110 (2007). [10.1063/1.2779236]

  45. “Carbon-Oxygen Coupling in the Reaction of Formaldehyde on Ge(100)-2x1,” M. A. Filler, C. B. Musgrave, S. F. Bent, J. Phys. Chem. C. 111 1739 (2007). [10.1021/jp064820v]

  46. “Thermal Control of Amide Product Distributions at the Ge(100)-2x1 Surface,” A. J. Keung, M. A. Filler, S. F. Bent, J. Phys. Chem. C. 111 411 (2007). [10.1021/jp065278d]

  47. “Selective Formation of Surface-bound Acyl Groups by Reaction of Acyl Halides on Ge(100)-2x1,” M. A. Filler, A. J. Keung, D. W. Porter, S. F. Bent, J. Phys. Chem. B 110 4115 (2006). [10.1021/jp055685+]

  48. “Carboxylic Acid Chemistry at the Ge(100)-2x1 Interface: Bidentate Bridging Structure Formation on a Semiconductor Surface,” M. A. Filler, J. A. Van Deventer, A. J. Keung, S. F. Bent, J. Am. Chem. Soc. 128 770 (2006). [10.1021/ja0549502]

  49. “Tertiary Amide Chemistry on Ge(100)-2x1,” A. J. Keung, M. A. Filler, S. F. Bent, Surf. Sci. 599 41 (2005). [10.1016/j.susc.2005.09.035]

  50. “Ethylenediamine on Ge(100)-2x1: The Role of Interdimer Interactions,” A. Kim, M. A. Filler, S. Kim, S. F. Bent, J. Phys. Chem. B 109 19817 (2005). [10.1021/jp054340o]

  51. “Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactions,” A. Kim, M. A. Filler, S. Kim, S. F. Bent, J. Am. Chem. Soc. 127 6123 (2005). [10.1021/ja042751x]

  52. “Reaction of Cyclic Aliphatic Amines on Ge(100)-2x1 and Si(100)-2x1,” G. T. Wang, C. Mui, J. F. Tannaci, M. A. Filler, C. B. Musgrave, S. F. Bent, J. Phys. Chem. B 107 4982 (2003). [10.1021/jp026864j]

  53. “Reactions of Nitriles at Semiconductor Surfaces,” C. Mui, M. A. Filler, S. F. Bent, C. B. Musgrave, J. Phys. Chem. B 107 12256 (2003). [10.1021/jp034864t]

  54. “Competition and selectivity in the reaction of nitriles on Ge(100)-2x1,” M. A. Filler, C. Mui, C. B. Musgrave, S. F. Bent, J. Am. Chem. Soc. 125 4928 (2003). [10.1021/ja027887e]

  55. “The surface as molecular reagent: Organic chemistry at the semiconductor interface,” M. A. Filler, S. F. Bent, Prog. Surf. Sci. 73 1 (2003). [Invited review] [10.1016/S0079-6816(03)00035-2]