Collaborative work with the labs of Matthias Wuttig and Thomas Taubner at Aachen University was just published in ACS Photonics. The paper, titled “Quantification of carrier density gradients along axially-doped silicon nanowires using infrared nanoscopy,” demonstrates a route to measure dopant gradients in Si nanowires. The nanowires used in this study were synthesized by Dmitriy Boyuk and Amar Mohabir.